FOUP Material Influence on HF Contamination during Queue-Time

Julien Bounouar; Thi Quynh Nguyen; Olivier Le-Barillec; Arnaud Favre; Emmanuelle Veran; Ingo Stassen; Astrid Gettel

doi:10.4028/www.scientific.net/SSP.219.251

Paper Titles

The Role of Mass Transfer in Removal of Cross-Linked Sacrificial Layers in 3DI Applications
p.233

Scaling the 3D Bumps Pitch from 20 to 10 μm, Focusing on the Wet Cu Seed Etch Process Development
p.237

Adhesion Improvement through Plasma Surface Treatments on Palladium Surface
p.241

Control of HF Volatile Contamination in FOUP Environment by Advanced Polymers and Clean Gas Purge
p.247

FOUP Material Influence on HF Contamination during Queue-Time
p.251

Effect of FOUP Atmosphere Control on Process Wafer Integrity in Sub20 nm Device Fabrication
p.256

Correlation of Cleaning Conditions and Wafer Out-Gassing
p.260

Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing
p.265

Collection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS Analysis
p.268

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FOUP Material Influence on HF Contamination during Queue-Time

Abstract:

Airborne Molecular Contamination (AMC) concentrations become critical during queue-time (between two successive process steps) when wafers are degassing inside Front Opening Unified Pod (FOUP), a confined environment [1]. In that case, AMC concentrations can reach maximum level.