Paper Titles
Upside-Down Residual Sessile Droplet: Watermarks on Wafers Backside
p.280
Nuclear Magnetic Resonance Spectroscopy of Trace Organic Impurities Extracted from a Corrosion Inhibitor and a Semiaqueous Residue Remover
p.284
Improvement of Silicon Solar Cell Substrates by Wet-Chemical Oxidation Studied by Surface Photovoltage Measurements
p.291
Simplified Cleaning for a-Si:H Passivation of Wafers Bonded to Glass
p.297
Investigation of Silicon Saw Damage Removal and Surface Texturing Using KOH for next Generation Silicon Solar Cells
p.300
Impact of Fe and Cu Surface Contamination on High Efficiency Solar Cell Processes
p.305
Ozone Base Cleaning: Impact on High Efficiency Interdigitated Back Contact Solar Cells
p.312
Rapid Determination of Organic Contaminations on Wafer Surfaces
p.317
Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment
p.320

Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment

Article Preview

Abstract:

Chalcopyrite ternary and kesterite quaternary thin films, such as Cu (In,Ga)(S,Se)2 and Cu2ZnSn (S,Se)4 generically referred to as CIGSSe and CZTSSe, respectively, have become the subject of considerable interest and study for semiconductor devices in recent years [1,2]. These materials are of particular interest for use as an absorber layer in photovoltaic devices. In thin film solar cells, the p-type CIGSSe or CZTSSe layer is combined with an n-type semiconductor thin film such as CdS buffer layer to form the p-n heterojunction of the device. The synthesis process of the CIGSSe or CZTSSe absorber layer requires temperatures ranging between 400 and 600 °C to form the photoactive chalcopyrite or kesterite phases [3,4]. During the synthesis process, the formation of trace amounts of binary/ternary compositions (i.e., undesirable secondary or impurity phases consisting of selenides, oxides, carbonates, etc.) may occur. These trace amounts of impurity phases may form at the nascent absorber surfaces, which could negatively affects the photovoltaic conversion efficiencies of solar cells [5-7]. Therefore, prior to the deposition of the CdS buffer layer, there is a need to clean the CIGSSe or CZTSSe surfaces to remove any possible traces of such impurities.

You might also be interested in these eBooks
Ultra Clean Processing of Semiconductor Surfaces XII View Preview

Info:

Periodical:

Solid State Phenomena (Volume 219)

Pages:

320-323

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.219.320

Citation:

Cite this paper

Online since:

September 2014

Authors:

Marie Buffiere, Abdel Aziz El Mel, Nick Lenaers, Guy Brammertz, Armin E. Zaghi, Marc Meuris, Jef Poortmans

Keywords:

Chemical Treatment, CIGS, CZTS, Etching, Passivation, Secondary Phases, Thin Film Solar Cells

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2015 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] P. Jackson et al., Prog. Photovolt: Res. Appl. 19, 894–897 (2011).

Google Scholar

[2] W. Wang et al., Advanced Energy Materials, in press, DOI: 10. 1002/aenm. 201301465 (2014).

Google Scholar

[3] K. L. Chopra et al., Prog. Photovolt: Res. Appl. 12: 69–92 (2004).

Google Scholar

[4] H. Katagari et al., Thin Solid Films 517, 7, 2455–2460 (2009).

Google Scholar

[5] J. K. Larsen et al., Appl. Phys. Lett. 98, 201910 (2011).

Google Scholar

[6] S. Siebentritt, and S. Schorr, Prog. Photovolt: Res. Appl. 20, 512–519 (2012).

Google Scholar

[7] J. Scragg, Springer Theses, 10. 1007/978-3-642-22919-0_5, Springer-Verlag Berlin Heidelberg (2011).

Google Scholar

[8] Y. Hashimoto et al., Jpn. J. Appl. Phys. 35, 4760-4764 (1996).

Google Scholar

[9] G. Brammertz et al., Appl. Phys. Lett. 103, 163904 (2013).

Google Scholar