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Internal Gettering of Copper for Microelectronic Applications
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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Internal Gettering of Copper for Microelectronic...

Internal Gettering of Copper for Microelectronic Applications

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Abstract:

The results of this work have shown that for microelectronic applications, gettering at dislocations is less important and oxygen precipitates are the main getter sink for Cu. Sufficient gettering of Cu in samples contaminated with low Cu concentration requires a higher density and larger oxygen precipitates compared to samples contaminated with high Cu concentration. It is demonstrated that the getter efficiency depends on the contamination level of the samples and getter test with low contamination level must be applied for microelectronic applications. Furthermore, a getter test for 3D chip stack technologies was developed. It was shown that although the wafers are thinned to a thickness of 50 μm their getter efficiency seems to be higher than for wafers of the original thickness. This is assumed to be due to the higher Cu concentration in the thinner wafers which can be gettered easier. It is also demonstrated that BMDs can getter Cu impurities even if the temperature does not exceed 300 °C. The getter efficiency tends to be higher if the samples are stored under day light and not in the dark.

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Gettering and Defect Engineering in Semiconductor Technology XVI

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Solid State Phenomena (Volume 242)

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236-245

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https://doi.org/10.4028/www.scientific.net/SSP.242.236

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Online since:

October 2015

Authors:

Gudrun Kissinger, Dawid Kot, Markus Andreas Schubert, Andreas Sattler, Timo Müller

Keywords:

Copper Impurity, Internal Gettering, Metal Impurity, Oxygen Precipitation, Silicon

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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