Detection and Prevention of Palladium Contamination in Silicon Devices

Maria Luisa Polignano; Isabella Mica; Agostino Brambilla; Claudio Brambilla; Simona Brambilla; Monica Ceresoli; Davide Codegoni; Laura Farini; Francesco Somaini

doi:10.4028/www.scientific.net/SSP.242.252

Paper Titles

A Density Functional Study of Iron Segregation at ISFs and Σ5-(001) GBs in mc-Si
p.224

Determination of Activation Energy of the Iron Acceptor Pair Association and Dissociation Reaction
p.230

Internal Gettering of Copper for Microelectronic Applications
p.236

Segregation Gettering Model for Nickel in p/p+ Silicon Wafers
p.246

Detection and Prevention of Palladium Contamination in Silicon Devices
p.252

Modeling the Post-Implantation Annealing of Platinum
p.258

Electrical Levels and Diffusion Barriers of Early 3d and 4d Transition Metals in Silicon
p.264

Search for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles Calculation
p.271

Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon
p.279

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Detection and Prevention of Palladium...

Detection and Prevention of Palladium Contamination in Silicon Devices

Abstract:

In this work we report the results of a set of experiments carried out to assess the ability of recombination lifetime measurements for the detection of palladium contamination in silicon. Palladium is found to be a very effective recombination center, so recombination lifetime measurements are a very sensitive method to detect palladium in silicon. The surface segregation of palladium was monitored by the reduction of its recombination activity in the silicon volume. The palladium segregation at the wafer surface was checked by selective etching, and by Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray (EDX) analysis.After validating recombination lifetime measurements for palladium detection, we use these measurements to define suitable approaches to the prevention of palladium contamination of silicon devices. The efficiency of a diffusion barrier layer (silicon nitride) and of decontamination by wet cleaning are tested.

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Periodical:

Solid State Phenomena (Volume 242)

Pages:

252-257

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.252

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Online since:

October 2015

Authors:

Maria Luisa Polignano*, Isabella Mica, Agostino Brambilla, Claudio Brambilla, Simona Brambilla, Monica Ceresoli, Davide Codegoni, Laura Farini, Francesco Somaini

Keywords:

Carrier Lifetime, Contamination, Diffusion Barrier, Palladium, Silicon, SPV

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