Search for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles Calculation

Sho Shirasawa; Koji Sueoka

doi:10.4028/www.scientific.net/SSP.242.271

Paper Titles

Segregation Gettering Model for Nickel in p/p+ Silicon Wafers
p.246

Detection and Prevention of Palladium Contamination in Silicon Devices
p.252

Modeling the Post-Implantation Annealing of Platinum
p.258

Electrical Levels and Diffusion Barriers of Early 3d and 4d Transition Metals in Silicon
p.264

Search for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles Calculation
p.271

Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon
p.279

Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon
p.290

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Search for Effective Sites of Proximity Gettering...

Search for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles Calculation

Abstract:

Fe, Ni and Cu atoms diffuse very quickly in Si and are the main targets for metal gettering. W, Hf, and Mo atoms, for example, which diffuse very slowly in Si have also recently become gettering targets in addition to these metals. Therefore, proximity gettering techniques by using ion implantation are being considered. Not only implanted elements but intrinsic point defects exist and form several complexes after the heat treatment for Si crystal recovery. This research systematically investigated the binding energy of twelve important metals (Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Mo, Hf, Ta, and W) with implanted dopants (B, C, P, and As) and their complexes with intrinsic point defects (vacancies (Vs) and self-interstitials (Is)) by using first principles calculation. These data should be useful in the design of proximity gettering in LSI manufacturing processes.

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Periodical:

Solid State Phenomena (Volume 242)

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271-276

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.271

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Online since:

October 2015

Authors:

Sho Shirasawa, Koji Sueoka*

Keywords:

First Principles Calculation, Proximity Gettering, Silicon Wafers

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