Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n–FZ–Si:P Crystals

Abstract:

We observed for the first time the thermally stable point positron-sensitive center of a vacancy type in n–FZ–Si (P) material irradiated at RT by ~ 0.9-MeV electrons. The center that emerges after isochronal annealing at T_anneal.≈ 260 – 280 oC is found to be similar to the vacancy-group-V-atom complex revealed in the same Si material irradiated by 15-MeV protons; the detecting of the centers by the positron trapping is finalized at T_anneal.≥ 520 oC. The annihilation gamma-quanta to be emitted from the positron trap gives rise to a characteristic positron lifetime τ₂ (I₂ ~ 38–19 %) ≤ 276 – 294 ps which is somewhat longer than the one predicted for unrelaxed single vacancy τ_V.≈ 254 – 261 ps. Our data suggested a configuration of the complex V_opPV_op, wherein the atom of phosphorus is tied to a split open vacancy volume 2V_op. It is argued that V_op volume detected by the positron trapping may be formed by extended semi-vacancy, V_s-ext , or by the relaxed inwards vacancy, V_inw , thus resulting in a distorted V_s-extPV_s-ext or V_inwPV_inw configurations.

• Periodical: Solid State Phenomena (Volume 242)
• Pages: 296-301
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.242.296
• Online since: October 2015
• Authors: Nikolai Yu. Arutyunov, M. Elsayed, Reinhard Krause-Rehberg, Vadim V. Emtsev, Gagik A. Oganesyan, Vitalii V. Kozlovski
• Keywords: Annihilation Radiation, Complexes, Positron, Radiation Defects, Silicon, Vacancy

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