Boron-Related Defects in Low Temperature Irradiated Silicon

Abstract:

The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration of the interstitial boron by the Bourgoin-Corbett mechanism. The interaction of diffusing atoms of B_i with one another and with atoms of interstitial oxygen was revealed. For as-irradiated samples we observed the appearance of three LVMs at 739.4, 759.6, and 780.9 cm^-1, which are attributed to B_iB_i complex, and the LVM at 923.5 cm^-1, which are identified as B_iO_i complex.

• Periodical: Solid State Phenomena (Volume 242)
• Pages: 285-289
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.242.285
• Online since: October 2015
• Authors: Ludmila Khirunenko*, Mikhail Sosnin, A.V. Duvanskii, N.V. Abrosimov, Helge Riemann
• Keywords: Boron, Defects, Irradiation, Silicon

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