Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon

Abstract:

It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at E_v + 0.09 eV is related to a complex of silicon di-interstitial with an oxygen atom (I₂O). This signal has been observed in the DLTS spectra of p-type Si:O samples irradiated with either 4-6 MeV electrons or alpha particles. Isochronal and isothermal annealing studies of the samples have shown that the defect responsible for the DLTS signal from the E_v + 0.09 eV level disappears upon heat-treatments in the temperature range 75-100 °C and its formation and annealing behavior is similar to that of a center giving rise to the infrared absorption band at 936 cm^-1 previously assigned to a local vibrational mode (LVM) due to the I₂O complex. Possible configurations of the I₂O complex have been found by ab-initio modeling and analyzed. Formation and binding energies, energy levels and LVMs for different configurations have been determined. It has been found that the minimum energy configuration of the I₂O complex consists of the compact I₂ to which a divalent interstitial oxygen atom is attached. Calculated values of the strongest LVM (ν = 971 см^-1 ) and position of the donor level {E_v + (0.11-0.13) eV} for the minimum energy configuration are very close to those assigned to the I₂O defect in the infrared absorption and DLTS experiments.

• Periodical: Solid State Phenomena (Volume 242)
• Pages: 290-295
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.242.290
• Online since: October 2015
• Authors: Vladimir P. Markevich*, Anthony R. Peaker, Bruce Hamilton, Vasilii E. Gusakov, Stanislav B. Lastovskii, Leonid I. Murin, Naveengoud Ganagona, E.V. Monakhov, Bengt Gunnar Svensson
• Keywords: Ab Initio Modeling, Deep Level Transient Spectroscopy, Di-Interstitial, Energy Levels, Oxygen, Silicon

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