Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope

Abstract:

The approach for imitation of beta radiation using the e-beam of scanning electron microscope (SEM) for semiconductor energy converter testing is proposed. It is based on the Monte-Carlo simulation of depth-dose dependence for beta-particles and a determination of collection probability from the EBIC measurements of collection efficiency dependence on beam energy. Experiments with the ⁶³Ni radiation source confirm that such approach allows to predict the efficiency of semiconductor structures for radiation energy conversion to electric power.

• Periodical: Solid State Phenomena (Volume 242)
• Pages: 312-315
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.242.312
• Online since: October 2015
• Authors: M.A. Polikarpov, Eugene B. Yakimov*
• Keywords: Beta-Voltaics, SEM, Simulation

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