Paper Titles

Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon
p.279

Boron-Related Defects in Low Temperature Irradiated Silicon
p.285

Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon
p.290

Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n–FZ–Si:P Crystals
p.296

Interstitial Carbon in p-Type Copper-Doped Silicon
p.302

Interaction of Interstitial Copper with Isolated Vacancies in Silicon
p.308

Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope
p.312

Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons
p.316

Spin Relaxation Times of Donor Centers Associated with Lithium in Monoisotopic ²⁸ Si
p.322

HomeSolid State PhenomenaSolid State Phenomena Vol. 242Interstitial Carbon in p-Type Copper-Doped Silicon

Interstitial Carbon in p-Type Copper-Doped Silicon

Article Preview

Abstract:

The spectrum of defects produced by 5 MeV electron irradiation at room temperature in the oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cu_i) is studied using the deep-level transient spectroscopy. It is observed that the interstitial carbon defects (C_i), which are abundant in irradiated copper-free samples, are not detected directly after irradiation. The phenomenon is attributed to the formation of a {Cu_i, C_i} complexes which exhibit no deep levels in the lower half of the band gap. The complexes are shown to dissociate under anneals at 300-340 K resulting in the appearance of the C_i species.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XVI

Info:

Periodical:

Solid State Phenomena (Volume 242)

Pages:

302-307

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.302

Citation:

Cite this paper

Online since:

October 2015

Authors:

Nikolai Yarykin*, Jörg Weber

Keywords:

Carbon Impurity, Copper Impurity, Radiation Defects, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] M.O. Aboelfotoh, B.G. Svensson, Phys. Rev. B 52 (1995) 2522.

[2] V.P. Markevich, A.R. Peaker, I.F. Medvedeva, V. Gusakov, L.I. Murin, B.G. Svensson, Solid State Phenom. 131-133 (2008) 363.

DOI: 10.4028/www.scientific.net/ssp.131-133.363

[3] N. Yarykin, J. Weber, Semiconductors 44 (2010) 983.

[4] N. Yarykin, J. Weber, Phys. Rev. B 83 (2011) 125207.

[5] N. Yarykin, J. Weber, Solid State Phenom. 205-206 (2014) 255.

[6] D. West, S.K. Estreicher, S. Knack, J. Weber, Phys. Rev. B 68 (2003) 035210.

[7] S.K. Estreicher, Mater. Sci. Semicond. Processing 7 (2004) 101.

[8] N. Yarykin, J. Weber, Semiconductors 49 (2015) 712.

[9] A. Mesli, T. Heiser, Phys. Rev. B 45 (1992) 11632.

[10] N. Yarykin, O.V. Feklisova, J. Weber, Phys. Rev. B 69 (2004) 045201.

[11] H.B. Erzgräber, K. Schmalz, J. Appl. Phys. 78 (1995) 4066.

[12] M.L.W. Thewalt, M. Steger et al., Physica B 401-402 (2007) 587.

[13] P.M. Mooney, L.J. Cheng, M. Süli, J.D. Gerson, J.W. Corbett, Phys. Rev. B 15 (1977) 3836.

[14] M.T. Asom, J.L. Benton, R. Sauer, L.C. Kimerling, Appl. Phys. Lett. 51 (1987) 256.

[15] L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, C.E. Caefer, Mater. Sci. Forum 38-41 (1989) 141.

DOI: 10.4028/www.scientific.net/msf.38-41.141

[16] T. Zundel, J. Weber, Phys. Rev. B 39 (1989) 13549.

[17] L. Dobaczewski, A.R. Peaker, K. Bonde Nielsen, J. Appl. Phys. 96 (2004) 4689.

[18] A.A. Istratov, C. Flink, H. Hieslmair, E.R. Weber, T. Heiser, Phys. Rev. Lett. 81 (1998) 1243.

DOI: 10.1103/physrevlett.81.1243