For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Boron-Related Defects in Low Temperature Irradiated Silicon
p.285
Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon
p.290
Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n–FZ–Si:P Crystals
p.296
Interstitial Carbon in p-Type Copper-Doped Silicon
p.302
Interaction of Interstitial Copper with Isolated Vacancies in Silicon
p.308
Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope
p.312
Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons
p.316
Spin Relaxation Times of Donor Centers Associated with Lithium in Monoisotopic 28 Si
p.322
The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon
p.327

Interaction of Interstitial Copper with Isolated Vacancies in Silicon

Article Preview

Abstract:

The spectrum of defects produced by 5 MeV electron irradiation in oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the room-temperature irradiation creates a large amount of CuPL centers (complexes including one substitutional and three interstitial Cu atoms). The analysis shows that this process is govern by formation of the substitutional copper atoms due to the direct reaction between irradiation-induced vacancies and mobile Cui species. This reaction consumes nearly all irradiation-induced vacancies and affects strongly the standard spectrum of radiation defects.

You might also be interested in these eBooks
Gettering and Defect Engineering in Semiconductor Technology XVI View Preview

Info:

Periodical:

Solid State Phenomena (Volume 242)

Pages:

308-311

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.308

Citation:

Cite this paper

Online since:

October 2015

Authors:

Nikolai Yarykin*, Jörg Weber

Keywords:

Copper Impurity, Radiation Defects, Silicon, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] M.O. Aboelfotoh, B.G. Svensson, Phys. Rev. B 52 (1995) 2522.

Google Scholar

[2] V.P. Markevich, A.R. Peaker et al., Solid State Phenom. 131-133 (2008) 363.

Google Scholar

[3] N. Yarykin, J. Weber, Semiconductors 44 (2010) 983.

Google Scholar

[4] N. Yarykin, J. Weber, Phys. Rev. B 83 (2011) 125207.

Google Scholar

[5] N. Yarykin, J. Weber, Solid State Phenom. 205-206 (2014) 255.

Google Scholar

[6] N. Yarykin, J. Weber, Semiconductors 49 (2015) 712.

Google Scholar

[7] N. Yarykin, J. Weber, another article in this volume.

Google Scholar

[8] A. Mesli, T. Heiser, Phys. Rev. B 45 (1992) 11632.

Google Scholar

[9] J. Weber, H. Bauch, R. Sauer, Phys. Rev. B 25 (1982) 7688.

Google Scholar

[10] M.L.W. Thewalt, M. Steger et al., Physica B 401-402 (2007) 587.

Google Scholar

[11] L. Dobaczewski, A.R. Peaker, K. Bonde Nielsen, J. Appl. Phys. 96 (2004) 4689.

Google Scholar

[12] S. Knack, J. Weber, H. Lemke, H. Riemann, Physica B 308-310 (2001) 404.

Google Scholar

[13] N. Yarykin, J. Weber, Semiconductors 47 (2013) 275.

Google Scholar

[14] A. Carvalho, D.J. Backlund, S.K. Estreicher, Phys. Rev. B 84 (2011) 155322.

Google Scholar

[15] G.D. Watkins, J. Appl. Phys. 103 (2008) 106106.

Google Scholar

[16] A.A. Istratov, C. Flink, H. Hieslmair, E.R. Weber, T. Heiser, Phys. Rev. Lett. 81 (1998) 1243.

DOI: 10.1103/physrevlett.81.1243

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.