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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Low-Frequency Noise Spectroscopy of Bulk and...

Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

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Abstract:

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

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Periodical:

Solid State Phenomena (Volume 242)

Pages:

449-458

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.449

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Online since:

October 2015

Authors:

Eddy Simoen, Bogdan Cretu, Wen Fang, Marc Aoulaiche, Jean Marc Routoure, Regis Carin, Jun Luo, Chao Zhao, Cor Claeys

Keywords:

Gate Oxide Trap, Generation-Recombination Noise, Metal-Oxide-Semiconductor Field-Effect Transistor, Random Telegraph Signal, Silicon-On-Insulator

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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