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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Radiation Damage in 4H-SiC and its Effect on Power...

Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics

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Abstract:

The effect of neutron, electron and ion irradiation on electrical characteristics of unipolar 1700V SiC power devices (JBS diodes, JFETs and MESFETs) was investigated. DLTS investigation showed that above mentioned projectiles introduce similar deep acceptor levels (electron traps) in the SiC bandgap which compensate nitrogen shallow donors and cause majority carrier (electron) removal. The key degradation effect occurring in irradiated devices is the increase of the ON-state resistance which is caused by compensation of the low doped n-type epilayer and simultaneous lowering of electron mobility. In the case of SiC power switches (JFET, MOSFET), these effects are accompanied by the shift of the threshold voltage. Radiation defects introduced in SiC power devices is unstable and some defects anneal out already at operation temperatures (below 175°C). However, this does not have significant effect on device characteristics.

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Periodical:

Solid State Phenomena (Volume 242)

Pages:

421-426

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.421

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Online since:

October 2015

Authors:

Pavel Hazdra*, Stanislav Popelka, Vít Záhlava, Jan Vobecký

Keywords:

Diode, Electrons, Neutrons, Proton Irradiation, Radiation Defects, Silicon Carbide (SiC), Transistor

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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