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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Influence of Composition of Aqueous Electrolytes...

Influence of Composition of Aqueous Electrolytes on Anisotropy of Porous Layer Formation Rate in Heavily Doped Silicon

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Abstract:

Concentration dependence of the pore formation rate in silicon under electrochemical anodization has been studied for different crystallographic directions. It was found that, for materials with doping levels N_B=2·10¹⁹ (p⁺⁺) cm^-3 and N_B=2.5·10¹⁷ cm^-3 (p⁺), the propagation rates of the porous front grow with increasing concentration of hydrofluoric acid in aqueous electrolytes for all the crystallographic directions, whereas the anisotropy of the pore formation rate becomes weaker. For the material with N_B=2.5·10¹⁷ cm^-3, the direction <111> remains the predominant direction in which the porous layer is formed for all the electrolyte compositions.

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Periodical:

Solid State Phenomena (Volume 242)

Pages:

408-413

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.408

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Online since:

October 2015

Authors:

Yuliya A. Zharova*

Keywords:

Anisotropy of Porous Layer Formation Rate, Electrochemical Etching of Silicon, Porous Silicon

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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