Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon

Peter Zaumseil; Markus Andreas Schubert; Yuji Yamamoto; Oliver Skibitzki; Giovanni Capellini; Thomas Schroeder

doi:10.4028/www.scientific.net/SSP.242.402

Paper Titles

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Defect Composition in Acceptor Doped ZnO Quantum Structures
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ZnO Nanoparticle Formation in ⁶⁴Zn⁺ Ion Implanted Al₂O₃
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Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon
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Influence of Composition of Aqueous Electrolytes on Anisotropy of Porous Layer Formation Rate in Heavily Doped Silicon
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Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices
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Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics
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Electrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam Exposure
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HomeSolid State PhenomenaSolid State Phenomena Vol. 242Misfit Dislocation Free Epitaxial Growth of SiGe...

Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon

Abstract:

The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attracting increasing interest and research effort. One way to realize this without threading and misfit dislocations is the so-called nanoheteroepitaxy approach. We demonstrate that a modified Si nanostructure approach with nanopillars or bars separated by TEOS SiO₂ can be used successfully to deposit SiGe dots and lines free of misfit dislocations. It was found that strain relaxation in the pseudomorphically grown SiGe happens fully elastically. These studies are important for the understanding of the behavior of nanostructured Si for the final goal of Ge integration via SiGe buffer.

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Solid State Phenomena (Volume 242)

Pages:

402-407

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.402

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Online since:

October 2015

Authors:

Peter Zaumseil, Markus Andreas Schubert, Yuji Yamamoto, Oliver Skibitzki, Giovanni Capellini, Thomas Schroeder

Keywords:

Heteroepitaxy, Nanostructured Si, SiGe, Transmission Electron Microscope, X-Ray Diffraction

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