Defect Formation in Ion-Implanted Si - Approach to Controlled Semiconductor Optical Properties

Abstract:

For specific modification of the fundamental optical and photoelectrical properties of silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses of 1 х 10¹³ cm^-2–1 х 10¹⁵ cm^-2 followed by annealing at 900 °C and 1000 °C (20 min). The IR reflection spectra, Raman spectroscopy and scanning electron microscopy data have been compared with the photosensitivity spectra (1.4–2.2 μm) and with the integrated photoresponse in the IR (1.0–4.1 μm) and UV (0.25–0.4 μm) regions. These studies allow for materials engineering to obtain new data on the influence of defect formation on the optical properties of the material and to evaluate the technological conditions for practical application of the modified material.

• Periodical: Solid State Phenomena (Volume 242)
• Pages: 374-379
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.242.374
• Online since: October 2015
• Authors: Nina Khuchua, Marina Tigishvili, Revaz Melkadze, Nugzar Dolidze, Nodar Gapishvili, Zurab Jibuti, Galina Davbeshko, V. Romanyuk
• Keywords: Boron-Implanted Silicon, Extended Defects, IR Photosensitivity, IR Reflection Spectra, p-n Structures, Raman-Spectroscopy, UV Photosensitivity

References

[1] M.G. Mil'vidskii, V.V. Chaldyshev, Nanoscale atomic clusters in semiconductors as a new approach to formation of material properties, Fiz. Tekhnika Poluprov. 32 (1998) 513.

[2] S. Eichler, J. Gebauer, F. Börner, A. Polity, R. Krause-Rehberg, E. Wendler, B. Weber, W. Wesch, H. Börner, Defects in silicon after B+implantation: A study using a positron-beam techniques, Rutherford backscattering, secondary neutral mass-spectroscopy. Phys. Rev. B 56 (1997).

DOI: 10.1103/physrevb.56.1393

[3] A. Usami, M. Katayama, J. Tokuda, T. Wada, Diode characteristics and residual deep-level defects of p+–n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon, Semicond. Sci. Technol. 2 (1987) 83.

DOI: 10.1088/0268-1242/2/2/003

[4] N.A. Sobolev, A.M. Emelianov, E.I. Shek, V.I. Vdovin, Influence of post-implantation annealing on the properties of silicon light-emitting diodes obtained by boron implantation in n-Si, Physika Tverd. Tela 46 (2004) 39.

DOI: 10.1134/1.1641916

[5] A.R. Cheladinski, Ph. Ph. Komarov, Defect-impurity engineering in implanted silicon. Uspekhi Fizicheskikh Nauk, 173, (2003) 813.

DOI: 10.3367/ufnr.0173.200308b.0813

[6] S.L. Libertino, A. La Magna, Damage formation and evolution in ion-implanted crystalline Si, in H. Bernas (Ed. ), Materials Science with ion beams, Springer, Heidelberg, 2010, pp.147-204.

DOI: 10.1007/978-3-540-88789-8_6

[7] Wai Lek Ng., M.A. Lourenço, R.M. Gwilliam, S. Ledain, G. Shao, K.P. Homewood, An efficient room-temperature silicon-based light-emitting diode, J. Nature, 410 (2001) 1036.

DOI: 10.1038/35065571

[8] N.P. Khuchua, N.D. Dolidze, N.G. Gapishvili, R.G. Gulyaev, Z.V. Jibuti, R.G. Melkadze, M.G. Tigishvili, Technology of semiconductor materials sensitive to different regions of the electromagnetic radiation spectrum, Nanotechnology Perceptions 10 (2014).

DOI: 10.4024/n09kh14a.ntp.010.02

[9] M.G. Tigishvili, N.P. Khuchua, R.G. Melkadze, N.D. Dolidze, N.G. Gapishvili, Z.V. Jibuti, G. Dovbeshko, V. Romanyuk, Semiconductor material with new optical properties for infrared and ultraviolet photodetectors, 2nd International Conference Modern Technologies and Methods of Inorganic Materials Science, 20-24 April (2015).

DOI: 10.4028/www.scientific.net/ssp.242.374

[10] A.N. Mikhailov, A.I. Belov, D.S. Korolev, A.O. Timofeeva, V.K. Vasilyev, A.N. Shushunov, A.I. Bobrov, D.A. Pavlov, D.I. Tetel'baum, E.I. Shek, Influence of ion doping on photoluminescence in Si associated with dislocations formed by Di ion implantation, Fiz. Tekhnika Poluprov. 48 (2014).

DOI: 10.1134/s1063782614020183

[11] M. Razerghi, A. Rogalski, Semiconductor ultraviolet detectors, Applied Physics Reviews 10 (1996) 7434-7470.