Defect Composition in Acceptor Doped ZnO Quantum Structures

Abstract:

We investigated defect composition in ZnO quantum structures – quantum wells and nanowires doped with Ag impurity. We investigated the influence of space and dielectric confinement on ionization energies of acceptor and compensation donor centers. These calculations show that in nanowire there is a optimal range of radius where the creation of ionized donors compensating hole conductivity, and consequently, improvement of hole conductivity, is possible to suppress.

• Periodical: Solid State Phenomena (Volume 242)
• Pages: 391-395
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.242.391
• Online since: October 2015
• Authors: Tamar Tchelidze*, Tamaz Kereselidze
• Keywords: p-Doping, Quantum Wells, Quantum Wires, ZNO

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