Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices

Michael Knetzger; Elke Meissner; Joff Derluyn; Marianne Germain; Jochen Friedrich

doi:10.4028/www.scientific.net/SSP.242.417

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Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices

Abstract:

The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The leakage current was determined by vertical I-V measurements.Two possibilities were found, which give potential explanations for the variations of the vertical leakage current: i) Threading dislocations, which may partially form leakage paths, were detected by CL imaging. ii) Variations of the carbon doping, which is used to tune GaN to a semi insulating material were revealed by CL spectroscopy.

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Solid State Phenomena (Volume 242)

Pages:

417-420

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.242.417

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Online since:

October 2015

Authors:

Michael Knetzger*, Elke Meissner, Joff Derluyn, Marianne Germain, Jochen Friedrich

Keywords:

Carbon Doping, Cathodoluminescence, Dislocations, Electrical Properties, GaN on Si, Structural Properties

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