Influence of Ti Doping on the Properties of Ge-Sb-Te Thin Films for Phase Change Memory

Alexey Sherchenkov; Sergey Kozyukhin; Petr Lazarenko; Alexey Babich; Sergey Timoshenkov; Dmitry Gromov; Alexey Yakubov; Dmitry Terekhov

doi:10.4028/www.scientific.net/SSP.247.30

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Influence of Ti Doping on the Properties of Ge-Sb-Te Thin Films for Phase Change Memory

Abstract:

The influence of Ti doping on the resistivity, activation energy of conductivity, energy band gap, Urbach energy, crystallization temperature, heat effect and crystallization kinetic parameters in Ge₂Sb₂Te₅ thin films for phase change memory was investigated. It was shown that introduction of Ti influences on the thermal properties, and kinetics of crystallization process. Results of analyzes showed that Ti doping affects crystallization time, and probability of spontaneous crystallization at room temperature, which must be taken into consideration at designing PCM cells with Ti electrodes.

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Periodical:

Solid State Phenomena (Volume 247)

Pages:

30-38

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.247.30

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Online since:

March 2016

Authors:

Alexey Sherchenkov, Sergey Kozyukhin, Petr Lazarenko*, Alexey Babich, Sergey Timoshenkov, Dmitry Gromov, Alexey Yakubov, Dmitry Terekhov

Keywords:

Ge-Sb-Te System, Phase Change Memory, Ti Doping

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