Characterization of In/Si(111) System by Optical Second-Harmonic Generation

Konstantin V. Ignatovich; Andrey V. Zotov; Aleksandr A. Saranin

doi:10.4028/www.scientific.net/SSP.247.73

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Characterization of In/Si(111) System by Optical Second-Harmonic Generation
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HomeSolid State PhenomenaSolid State Phenomena Vol. 247Characterization of In/Si(111) System by Optical...

Characterization of In/Si(111) System by Optical Second-Harmonic Generation

Abstract:

We investigated the change of optical second harmonic generation (SHG) intensity during In/Si (111) interface formation. It was proved that Si (111)2×2-In reconstruction is formed by one monolayer of In on silicon surface.

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Periodical:

Solid State Phenomena (Volume 247)

Pages:

73-75

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.247.73

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Online since:

March 2016

Authors:

Konstantin V. Ignatovich*, Andrey V. Zotov, Aleksandr A. Saranin

Keywords:

Monolayer, Second Harmonic Generation, Silicon Surface

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