Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics

Germar Schneider; Thi Quynh Nguyen; Matthias Taubert; Julien Bounouar; Catherine Le-Guet; Andreas Leibold; Helene Richter; Markus Pfeffer

doi:10.4028/www.scientific.net/SSP.255.381

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Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics
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Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics

Abstract:

This paper gives an overview about all activities performed within a common project between industrial and academic partners to define clean room concepts for the first worldwide high volume semiconductor front end facility IFD for 300 mm power semiconductors. The investigation within this study is the base for the 300 mm container strategy resulting in new innovative manufacturing and automation concepts.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

381-386

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.381

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Online since:

September 2016

Authors:

Germar Schneider, Thi Quynh Nguyen, Matthias Taubert, Julien Bounouar, Catherine Le-Guet, Andreas Leibold, Helene Richter, Markus Pfeffer

Keywords:

AMC, FOSB, FOUP, Particle Contamination

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References

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