Features of Zone Thermal Recrystallization of Germaniun Layers Grown on Silicon Substrates from a Discrete Source

Abstract:

We have proposed and investigated a new technique for growing thin uniform layers onto a large semiconductor substrates. The method uses the system of hexagonally arranged round local sources filled with liquid growth substance. The growth substance evaporates on very close substrate, which is removed from the discrete source by about 1 mm. In these conditions vapor pressure of the residual gases is reduced by two orders of magnitude. It is found that to obtain uniform thickness layers by the proposed technique it is strongly necessary that the distance between the discrete source and the substrate will be greater than the critical thickness lcr. It is shown that this parameters lcr increases with the increasing of radius of local sources and the distance between the local sources. For example, to achieve uniformity of better than 97% the critical thickness must be equal to lcr = 1.2 mm for a hexagonal arranged system of round local sources with the radius of r = 0.75 mm and the distance between the sources of h = 0.5 mm.

• Periodical: Solid State Phenomena (Volume 265)
• Pages: 620-626
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.265.620
• Online since: September 2017
• Authors: S.N. Chebotarev*, A.N. Yatsenko, L.S. Lunin
• Keywords: Discrete Source, Semiconductors, Thermal Recrystallization, Thin Layers

References

[1] V.G. Shengurov, V.Y. Chalkov, S.A. Denisov, M.V. Stepikhova, Z.F. Krasilnik, Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire, Semiconductors, 50(9) (2016).

DOI: 10.1134/s1063782616090220

[2] V.G. Shengurov, S.A. Denisov, S.P. Svetlov, V.Y. Chalkov, D.V. Shengurov, A device for heating a substrate during molecular beam epitaxy. Instruments and Experimental Techniques, 59(2) (2016) 317-320.

DOI: 10.1134/s0020441216020135

[3] P.B. Boldyrevskii, A.G. Korovin, S.A. Denisov, S.P. Svetlov, V.G. Shengurov, Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy. Technical Physics, 59(11) (2014) 1732-1735.

DOI: 10.1134/s1063784214110073

[4] E.A. Trofimov, O.V. Samoilova, The Study of Conditions for the Silicon Carbide Crystals Formation in the Complex Composition Metal Melt, Materials Science Forum, 843 (2016) 167-172.

DOI: 10.4028/www.scientific.net/msf.843.167

[5] D.A. Mirzayev, A.A. Mirzoev, P.V. Chirkov, Ordering of carbon atoms in free martensite crystals and when enclosed in elastic matrix, Metallurgical and Materials Transactions, 47(2) (2016) 637-640.

DOI: 10.1007/s11661-015-3258-9

[6] V.E. Roshchin et al., Role of a silicate phase in the reduction of iron and chromium and their oxidation with carbide formation during the manufacture of carbon ferrochrome, Russian Metallurgy, 11 (2016) 1092-1099.

DOI: 10.1134/s0036029516090123

[7] V.S. Zolotorevsky, N.A. Belov, Yu.N. Mansurov, Morphology and Composition of Iron-Containing Phases in Foundry Magnaliums, Izvestiya Vysshikh Uchebnykh Zavedenij, Tsvetnaya Metallurgiya, 4 (1986) 85-90.

[8] Yu.N. Mansurov, E.I. Kurbatkina, I. Yu. Buravlev, V.P. Reva, Features of structure's formation and properties of composite aluminum alloy ingots, Non-ferrous Metals, 39(2) (2015) 40-47.

DOI: 10.17580/nfm.2015.02.08

[9] V.S. Rudnev, P.M. Nedozorov, T.P. Yarovaya, Yu.N. Mansurov, Local plasma and electrochemical oxygenating on the example of AMg5 (AMr5) alloy, Tsvetnye Metally, 1 (2017) 59-64.

DOI: 10.17580/tsm.2017.01.10

[10] S.N. Chebotarev, A.S. Pashchenko, L.S. Lunin, V.A. Irkha, Features in the formation of Ge/Si multilayer nanostructures under ion-beam-assisted crystallization, Technical Physics Letters, 39(8) (2013) 726-729.

DOI: 10.1134/s1063785013080178

[11] L.S. Lunin, S.N. Chebotarev, A.S. Pashchenko, L.N. Bolobanova, Ion beam deposition of photoactive nanolayers for silicon solar cells. Inorganic Materials, 48(5) (2012) 439-444.

DOI: 10.1134/s0020168512050111

[12] S.N. Chebotarev, A.S. Pashchenko, L.S. Lunin, V.A. Irkha, Regularities of ion-beam-induced crystallization and properties of InAs-QD/GaAs(001) semiconductor nanoheterostructures. Nanotechnologies in Russia, 11(7-8) (2016) 435-443.

DOI: 10.1134/s1995078016040030

[13] S.N. Chebotarev, A.S. Pashchenko, A. Williamson, L.S. Lunin, V.A. Irkha, V.A. Gamidov, Ion beam crystallization of InAs/GaAs(001) nanostructures. Technical Physics Letters, 41(7) (2015) 661-664.

DOI: 10.1134/s1063785015070056

[14] S.N. Chebotarev, A.S. Pashchenko, V.A. Irkha, M.L. Lunina, Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering. Journal of Nanotechnology, 2016: 5340218.

DOI: 10.1155/2016/5340218

[15] V. Yu. Balandin, L.N. Aleksandrov, A.V. Dvurechenskii, O.A. Kulyasova, Interference effects at laser pulse heating of multilayer structures. Physica Status Solidi(a), 142(1) (1994) 99-105.

DOI: 10.1002/pssa.2211420112

[16] L.S. Lunin, S.N. Chebotarev, A.S. Pashchenko, S.A. Dudnikov, Correlation between the size and photoluminescence spectrum of quantum dots in InAs-QD/GaAs. Journal of Surface Investigation, 7(1) (2013) 36-40.

DOI: 10.1134/s1027451013010138

[17] L.N. Aleksandrov, S.V. Lozovskii, S.Y. Knyazev, Silicon zone sublimation regrowth. Physica Status Solidi(a), 107(1) (1988) 213-223.

DOI: 10.1002/pssa.2211070122

[18] S.A. Denisov, S.P. Svetlov, V.Y. Chalkov, D.V. Shengurov, V.G. Shengurov, A device for growing silicon films on standard wafers using a sublimation source. Instruments and Experimental Techniques, 58(6) (2015) 813-816.

DOI: 10.1134/s0020441215050048

[19] V.N. Lozovskii, S.V. Lozovskii, G.V. Valov, Sorption vacuumization of a growth cell during zone sublimation recrystallization. Technical Physics Letters, 39(2) (2013) 175-178.

DOI: 10.1134/s1063785013020120

[20] D.O. Filatov, A.P. Gorshkov, N.S. Volkova, S.A. Denisov, V.G. Shengurov, Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium. Semiconductors, 49(3) (2015).

DOI: 10.1134/s1063782615030082

[21] V.I. Lozgachev, The distribution of molecules in the plane streams by evaporation in vacuum. Technical Physics, 32(8) (1962) 1012-1022.

[22] V.N. Lozovskii, S.N. Chebotarev, V.A. Irkha, G.V. Valov, Formation and use of positioning marks in scanning probe microscopy. Technical Physics Letters, 36(8) (2010) 737-738.

DOI: 10.1134/s1063785010080171