GaN Materials Nanostructures Growth Control in the Epitaxial Units

Abstract:

The article overviews the results of the research into the peculiarities of GaN and AlGaN epitaxy from metal organic compounds, the influence of its peculiarities on the formation of GaN epitaxial layers and gives recommendations on the development of new methods for GaN epitaxial growth as well as on the research how they impact the characteristics of grown layers. The use of such semi-conductors allows obtaining full-color RGB light sources, increasing record density of a digital data storage device, getting high-capacity and efficient sources of white light. The electronic properties of such semi-conductors allow using them as a basis for high-power and high-frequency transistors and other electronic devices the specifications of which are competitive with those of SiC-based devices.

• Periodical: Solid State Phenomena (Volume 265)
• Pages: 627-630
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.265.627
• Online since: September 2017
• Authors: A. Zhilenkov*
• Keywords: GaN, Metal Organic Vapour Phase Epitaxy, Molecular Beam Epitaxy, Nanostructures

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