Peculiarities of Photovoltage Formation across p-n Junction under Illumination of Laser Radiation

Abstract:

Photovoltage formation across Si and GaAs p-n junctions exposed to laser radiation is experimentally investigated. When the photon energy is lower than semiconductor forbidden energy gap, the photovoltage is found to consist of two components, U=U_f+ U_ph. The first one Uf is fast having polarity of thermoelectromotive force of hot carriers. The second one Uph is slow component of opposite polarity, and it is caused by electron-hole pair generation due to two-photon absorption. Uph was shown to decrease with the rise of radiation wavelength due to diminution of two-photon absorption coefficient with wavelength. Predominance of each separate component in the formation of the net photovoltage depends on both laser wavelength and intensity.

• Periodical: Solid State Phenomena (Volume 267)
• Pages: 167-171
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.267.167
• Online since: October 2017
• Authors: Steponas Ašmontas*, Jonas Gradauskas, Algirdas Sužiedėlis, Aldis Šilėnas, Edmundas Širmulis, Vitas Švedas, Viktoras Vaičikauskas, Vytautas Vaičiūnas, Darius Valiulis, Ovidijus Žalys, Vitaliy Kostylyov
• Keywords: GaAs, Hot Carriers, Laser Radiation, Photovoltage, Silicon, Solar Cell

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