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HomeSolid State PhenomenaSolid State Phenomena Vol. 271Graphene/Ge Schottky Junction Based IR...

Graphene/Ge Schottky Junction Based IR Photodetectors

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Abstract:

Ge p-i-n photodetectors with and without graphene on active area fabricated and investigated the graphene effects on opto-electrical properties of photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that dark current of p-i-n photodetector with graphene were reduced significantly compared with photodetector without graphene. This improvement is attributed to the passivation of the graphene layers that leads to the efficient light detection. Therefore, it is noted that the uniform coverage of graphene onto the Ge surface plays a significant role in advancing their opto-electrical performance of photodetector.

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Advanced Research in Materials Science

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Periodical:

Solid State Phenomena (Volume 271)

Pages:

133-137

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.271.133

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Online since:

January 2018

Authors:

Zagarzusem Khurelbaatar, Chel Jong Choi*

Keywords:

Germanium, Graphene, Heterojunction, p-i-n Photodetector

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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