Growth Temperature Dependence of Sol-Gel Spin Coated Indium Nitride Thin Films

Abstract:

The study highlights the effects of growth temperatures ranging from 500 to 650 °C on the properties of indium nitride (InN) thin films prepared by sol-gel spin coating method followed by nitridation, also, the growth mechanism was studied in depth. The findings revealed that the InN crystal growth was promoted at the growth temperature of 600 °C, by which the crystalline quality of the deposited thin films was improved and the densely packed InN grains were formed. However, thermal decomposition of InN was observed at increasing temperature to 650 °C. Apart from that, the infrared (IR) reflectance measurement shows the presence of transverse and longitudinal-optical phonon modes of wurtzite structure InN. These vibrational modes were found to be slightly shifted from the theoretical values as a result of the incorporation of oxygen contamination in the deposited thin films.

• Periodical: Solid State Phenomena (Volume 290)
• Pages: 153-159
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.290.153
• Online since: April 2019
• Authors: Zhi Yin Lee*, Sha Shiong Ng, Fong Kwong Yam, Zainuriah Hassan
• Keywords: Characterization, Growth Temperature, Indium Nitride, Nitridation, Sol-Gel Spin Coating

References

[1] Y. Nanishi, Y. Saito, T. Yamaguchi, RF-molecular beam epitaxy growth and properties of InN and related alloys. Jap. J. Appl. Phys. 42 (2003) 2549-2559.

DOI: 10.1143/jjap.42.2549

[2] Z. L. Xie, R. Zhang, X. –Q. Xiu, B. Liu, L. Li, P. Han, S. –L. Gu, Y. Shi, Y. –D. Zheng, Growth and characterization of InN thin films on sapphire by MOCVD. Chin. Phys. Lett. 24 (2007) 1004-1006.

[3] S. Nakamura, M. Senoh, T. Mukai, High power InGaN/GaN double-heterostructure violet light emitting diodes. Appl. Phys. Lett. 62 (1993) 2390-2392.

DOI: 10.1063/1.109374

[4] J. B. Macchesney, P. M. Bridenbaugh, P. B. O'Connor, Thermal stability of indium nitride at elevated temperatures and nitrogen pressure. Mater. Res. Bull. 5 (1970) 783-792.

DOI: 10.1016/0025-5408(70)90028-0

[5] M. C. Johnson, C. J. Lee, E. D. Bourret-Courchesne, Growth and morphology of 0.80 eV photoemitting indium nitride nanowires. Appl. Phys. Lett. 85 (2004) 5670-5672.

DOI: 10.1063/1.1831563

[6] L. Gao, Q. Zhang, J. Li, Preparation of ultrafine InN powder by the nitridation of In2O3 or In(OH)3 and its thermal stability. J. Mater. Chem. 13 (2003) 154-158.

DOI: 10.1039/b208105a

[7] H. Shinoda, N. Mutsukura, Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique. Thin Solid Films 476 (2005) 276-279.

DOI: 10.1016/j.tsf.2004.09.032

[8] Z. Chen, Y. Li, C. Cao, S. Zhao, S. Fathololoumi, Z. Mi, X. Xu, Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement. J. Am. Chem. Soc. 134 (2012) 780-783.

DOI: 10.1021/ja209072v

[9] Ö. Tuna, H. Behmenburg, C. Giesen, H. Kalisch, R. H. Jansen, G. P. Yablonskii, M. Heuken, Dependence of InN properties on MOCVD growth parameters. Phys. Stat. Sol. C 8 (2011) 2044-2046.

DOI: 10.1002/pssc.201001004

[10] S. Mukundan, L. Mohan, G. Chandan, B. Roul, S. B. Krupanidhi, S. Shinde, K. K. Nanda, R. Maiti, S. K. Ray, High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE. AIP Adv. 5 (2015) 037112, 9 pages.

DOI: 10.1063/1.4914842

[11] S. S. Ng, Z. Y. Lee, C. Y. Fong, Z. Hassan, F. K. Yam, A method for producing crystalline indium nitride thin film on a single crystal substrate. Malaysia Patent Filing PI 2016700714 (2016).

[12] Z. Y. Lee, S. S. Ng, F. K. Yam, Growth mechanism of indium nitride via sol-gel spin coating method and nitridation process. Surf. Coat. Tech. 310 (2016) 38-42.

DOI: 10.1016/j.surfcoat.2016.12.066

[13] F. Stokker-Cheregi, A. Nedelcea, F. –M. Voicu, D. –M. Marin, R. Birjega, M. Dinescu, Structure and morphology of indium nitride thin films grown by plasma assisted PLD: The impact of nitrogen flow and substrate temperature. Rom. Rep. Phys. 65 (2013) 213-218.

[14] A. R. Acharya, S. Gamage, M. K. I. Senevirathna, M. Alevli, K. Bahadir, A. G. Melton, I. Ferguson, N. Dietz, B. D. Thoms, Thermal stability of InN epilayers grown by high pressure chemical vapor deposition. Appl. Surf. Sci. 268 (2013) 1-5.

DOI: 10.1016/j.apsusc.2012.10.184

[15] P. S. Connell, The photochemistry of dinitrogen pentoxide. Lawrence Berkeley National Laboratory, LBNL Paper LBL-9034 (2011) 1-167.

[16] Q. N. Abdullah, F. K. Yam, Z. Hassan, M. Bououdina, Growth and conversion of β-Ga2O3 nanobelts into GaN nanowires via catalyst-free chemical vapor deposition technique. Superlattices Microstruct. 54 (2013) 215-224.

DOI: 10.1016/j.spmi.2012.11.017

[17] J. Zhang, H. Liu, R. Huang, T. Kong, G. Cheng, Controllable growth of InN nanostructures. J. Nanoeng. Nanomanuf., 2 (2012) 112-122.

[18] C. Y. Fong, S. S. Ng, F. K. Yam, H. Abu Hassan, Z. Hassan, Effects of nitridation temperature on characteristics of gallium nitride thin films prepared via two-step method. Acta Metall. Sin. – Engl., 28 (2015) 362-366.

DOI: 10.1007/s40195-015-0206-z

[19] Y. Saito, H. Harima, E. Kurimoto, T. Yamaguchi, N. Teraguchi, A. Suzuki, T. Araki, Y. Nanishi, Growth temperature dependence of indium nitride crystalline quality grown by RF-MBE. Phys. Stat. Sol. B 234 (2002) 796-800.

DOI: 10.1002/1521-3951(200212)234:3<796::aid-pssb796>3.0.co;2-h

[20] M. Amirhoseiny, Z. Hassan, S. S. Ng, Growth of InN thin films on different Si substrates at ambient temperature. Microelectron. Int. 30 (2013) 63-67.

DOI: 10.1108/13565361311314430

[21] J. J. Zhang, G. J. Zhao, X. X. Liang, First-principle studies of phonons III-N compound semiconductors in wurtzite structure. Int. J. Appl. Phys. Math. 3 (2013) 227-230.

DOI: 10.7763/ijapm.2013.v3.210

[22] X. H. Ji, S. P. Lau, H. Y. Yang, Q. Y. Zhang, Structural and optical properties of wurtzite InN grown on Si(111). Thin Solid Films 515 (2007) 4619-4623.

DOI: 10.1016/j.tsf.2006.11.046