Fabrication of InxGa1-xN/GaN Multi-Quantum well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

Shamsul Amir Abdul Rais; Hayatun Najihah; Zainuriah Hassan; Ahmad Shuhaimi Abu Bakar

doi:10.4028/www.scientific.net/SSP.290.147

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Fabrication of In_xGa_1-xN/GaN Multi-Quantum well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
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HomeSolid State PhenomenaSolid State Phenomena Vol. 290Fabrication of InxGa1-xN/GaN Multi-Quantum well...

Fabrication of In_xGa_1-xN/GaN Multi-Quantum well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

Abstract:

Abstract. In an effort to successfully fabricate InGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in In_xGa_1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 5 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. 6 pairs of InGaN/GaN multi-quantum well structure grown by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 9:1. The crystal and optical properties of the samples were characterized using field effect atomic force microscopy, high resolution x-ray diffraction, and photoluminescence spectroscopy.

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Periodical:

Solid State Phenomena (Volume 290)

Pages:

147-152

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.290.147

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Online since:

April 2019

Authors:

Shamsul Amir Abdul Rais*, Hayatun Najihah, Zainuriah Hassan, Ahmad Shuhaimi Abu Bakar

Keywords:

Green Emission, Light Emitting Diode, MOCVD, Multi-Quantum Well

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