The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

Abstract:

This study prepared an SiC thin film by using the ratio frequency magnetron sputtering method, investigated the effects of different sputtering powers on the SiC material and analysed the changes in crystal morphology and photoluminescence characteristics caused by changes in the growth conditions used. It was considered that there was 6H-SiC crystal morphologies in the SiC thin film under the experimental conditions prevailing in this study. The SiC morphologies with small grain sizes intermingled and therefore formed anSiC thin film. The analyses of the photoluminescence spectra and Scanning Electron Microscope indicated that the SiC thin film materials with preferable crystal compositions could be prepared under appropriate power inputs.

• Periodical: Solid State Phenomena (Volume 295)
• Pages: 93-97
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.295.93
• Online since: August 2019
• Authors: Chang Zhao*, Man Zhao, Su Ye Lv, Qing Jun Liu, Guang Jian Xing
• Keywords: Magnetron Sputtering, Nanocluster, Photoelectronic Characteristic, SiC Film

References

[1] P.R. Poudel, P.P. Poudel, B. Rout, M. El Bouanani, F.D. McDaniel, Nuclear Instru-ments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 283 (July) (2012) 93–96.

DOI: 10.1016/j.nimb.2012.04.017

[2] Nur Fatin Farhanah Binti Nazarudin, Siti Nur Azieani Binti Azizan, Saadah Abdul Rahman, Boon Tong Goh, Growth and structural property studies on NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition. Thin Solid Films, 570 (2014) 243-248.

DOI: 10.1016/j.tsf.2014.03.030

[3] M. Yazdanfar, P. Stenberg, I.D. Booker, I.G. Ivanov, O. Kordina, H. Pedersen, E.Janzen, Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD, Journal of Crystal Growth 380 (2013) 55–60.

DOI: 10.1016/j.jcrysgro.2013.05.037

[4] P. Jantawongrita,d, S. Sanorpimb, H. Yaguchic, M. Oriharac, P. Limsuwana,d, Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE, Procedia Engineering 32 (2012) 882-887.

DOI: 10.1016/j.proeng.2012.02.027

[5] S. Zhang, R. Tu, T. Goto, High-Speed Epitaxial Growth of β-SiC Film on Si(111) Single Crystal by Laser Chemical Vapor Deposition, Journal of the American Ceramic Society. 95 (2012) 2782–2784.

DOI: 10.1111/j.1551-2916.2012.05354.x

[6] M.A. Fraga, M. Massi, I.C. Oliveira, F.D. Origo, W. Miyakawa, Laser annealing of sputter-deposited a-SiC and a-SiCxNy films, Bulletin of Materials Science, 34(2011) 1375–1378.

DOI: 10.1007/s12034-011-0331-x

[7] Jae Keun Seo, Yeun-Ho Joung, Young Park, Won Seok Choi, Substrate temperature effect on the SiC passivation layer synthesized by an RF magnetron sputtering method, Thin Solid Films, 519(2011) 6654-6657.

DOI: 10.1016/j.tsf.2011.04.052

[8] Rami Khazaka;Marc Portail; Philippe Vennéguès; Daniel Alquier; Jean François Michaud, Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition, Acta Materialia, 98 (2015) 336-342.

DOI: 10.1016/j.actamat.2015.07.052

[9] U. Lindefelt, A model for doping-induced band gap narrowing in 3C-, 4H-, and 6H-SiC, Materials Science and Engineering B 61-62 (1999) 225 – 228.

DOI: 10.1016/s0921-5107(98)00507-8

[10] S.J. Pearton, C.R. Abernathy, G.T. Thaler, R. Frazier, F. Ren A.F. Hebard, Y.D. Park, D.P. Norton, W. Tang, M. Stavola, J.M. Zavada, R.G. Wilson, Effects of defects and doping on wide band gap ferromagnetic semiconductors, Physica B 340–342 (2003) 39–47.

DOI: 10.1016/j.physb.2003.09.003