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Si1-XGeX Selective Etchant for Gate-All-Around Transistors

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Abstract:

3 formulated etchants were prepared and their etch rates were measured using blanket wafers in order to confirm that the etching reactions on Si1-XGeX and Si are controllable. Si1-XGeX selective etching with those formulations was also verified using the wafers which had Si1-XGeX and Si multi-stacked structures. Cross-sectional transmission electron microscope (TEM) images suggested that the formulations were usable for Si1-XGeX selective etching processes.

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Info:

Periodical:

Solid State Phenomena (Volume 314)

Pages:

71-76

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.71

Citation:

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Online since:

February 2021

Authors:

Ken Harada*, Tatsunobu Suzuki, Tomohiro Kusano, Kan Takeshita, Yusuke Oniki, Efrain Altamirano-Sanchez, Herbert Struyf, Frank Holsteyns

Keywords:

GAA, Gate-All-Around, Nanosheet, Nanowire, Selective Etchant, SiGe

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© 2021 Trans Tech Publications Ltd. All Rights Reserved

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