Characterization of Wet Chemical Atomic Layer Etching of InGaAs

Tomoki Hirano; Kenya Nishio; Takashi Fukatani; Suguru Saito; Yoshiya Hagimoto; Hayato Iwamoto

doi:10.4028/www.scientific.net/SSP.314.95

Paper Titles

Si_1-XGe_X Selective Etchant for Gate-All-Around Transistors
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GaN MOS Structures with Low Interface Trap Density
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Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water
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Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions
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Characterization of Wet Chemical Atomic Layer Etching of InGaAs
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Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning
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Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid
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Kinetic Study on the Si₃N₄ Etching in Superheated Water
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Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling
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HomeSolid State PhenomenaSolid State Phenomena Vol. 314Characterization of Wet Chemical Atomic Layer...

Characterization of Wet Chemical Atomic Layer Etching of InGaAs

Abstract:

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H₂O₂ was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH₄OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH₄OH treatment, so the combination of H₂O₂ and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.