Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid

Philippe Garnier; Thomas Massin; Corentin Chatelet; Emmanuel Oghdayan; Jeffrey Lauerhaas; Carlos Morote; Jeffery W. Butterbaugh

doi:10.4028/www.scientific.net/SSP.314.107

Paper Titles

Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water
p.84

Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions
p.89

Characterization of Wet Chemical Atomic Layer Etching of InGaAs
p.95

Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning
p.101

Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid
p.107

Kinetic Study on the Si₃N₄ Etching in Superheated Water
p.113

Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling
p.119

Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas
p.127

High Performance, Eco-Friendly SPM Cleaning Technology Using Integrated Bench-Single Wafer Cleaning System
p.133

HomeSolid State PhenomenaSolid State Phenomena Vol. 314Silicon Corrosion during Selective Silicon Nitride...

Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid

Abstract:

Silicon nitride is commonly etched by hot orthophosphoric acid. Hot diluted hydrofluoric acid is hereby used as an alternative. Nonetheless, in presence of silicon surfaces, some corrosion has been evidenced, degrading significantly active areas during the STI (Shallow Trench isolation) integration. Oxygen in hot deionized water or hot HF generates this corrosion and selecting a relevant chemical oxide before dispensing hot diluted HF is key in solving the concern.

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XV

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 314)

Pages:

107-112

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.107

Citation:

Cite this paper

Online since:

February 2021

Authors:

Philippe Garnier*, Thomas Massin, Corentin Chatelet, Emmanuel Oghdayan, Jeffrey Lauerhaas, Carlos Morote, Jeffery W. Butterbaugh

Keywords:

Chemical Oxide, Hot Diluted HF, Silicon Corrosion, SiN Selective Etch, Spray Batch Tool

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] P. Garnier, Selective silicon nitride etch with hot diluted HF – an alternative to orthophosphoric acid, ECS Trans. 2015 vol. 69, issue 8, 169-175.

DOI: 10.1149/06908.0169ecst

Google Scholar

[2] P. Garnier, Phosphoric acid rinse impact on CMOS devices, SPCC conference (2019).

Google Scholar

[3] P. Garnier, Deep trenches cleanliness challenges for CMOS image sensors, ECS Trans. 2017 80(2): 101-109.

DOI: 10.1149/08002.0101ecst

Google Scholar

[4] M. Knotter, Etching mechanism of silicon nitride in HF based solutions, J. Electrochem. Soc., 43- 46 (2001).

Google Scholar

[5] N. Mitsugi, Pit formation induced by copper contamination on silicon surface immersed in dilute hydrofluoric acid solution, J. Electrochem. Soc., 151(5) (2004).

DOI: 10.1149/1.1669026

Google Scholar

[6] S. Garcia, et al. Understanding the pH dependence of silicon etching: the importance of dissolved oxygen in buffered HF etchants, Surface Science, Vol. 541, Issues 1-3, 252-261 (2003).

DOI: 10.1016/s0039-6028(03)00952-x

Google Scholar

[7] C. Wade et al., Etch-pit initiation by dissolved oxygen on terraces of H-Si(111), Appl. Phys. Lett. 72, 133 (1998).

DOI: 10.1063/1.120665

Google Scholar

[8] G. Higashi et al., The influence of HF, OH and dissolved O2 in silicon surface chemical cleaning, ECS Meeting, Honolulu, May (1993).

Google Scholar

[9] L. Broussous et al., Oxygen control for wet clean process on single wafer platform, Solid State Phenomena 255, 260-264 (2016).

DOI: 10.4028/www.scientific.net/ssp.255.260

Google Scholar