Kinetic Study on the Si3N4 Etching in Superheated Water

Changjin Son; Sang Woo Lim

doi:10.4028/www.scientific.net/SSP.314.113

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HomeSolid State PhenomenaSolid State Phenomena Vol. 314Kinetic Study on the Si3N4 Etching in Superheated...

Kinetic Study on the Si₃N₄ Etching in Superheated Water

Abstract:

Wet etching of Si₃N₄ was conducted in superheated water at 160 °C with different additives type and concentration. In general, etching rate of Si₃N₄ increased with the pH of solution. However, it is difficult to fully explain the Si₃N₄ etching behavior just with the pH of solution. The OH^- concentration (or pH) in superheated water at 160 °C are different from the pH of solution at room temperature. Therefore, the OH^- concentrations in superheated water at 160 °C were calculated using van't Hoff equation, equilibrium constant equations, mass and charge balance equations. The calculated OH^- concentration at 160 °C showed better correlation with Si₃N₄ etching rate than that of initial pH of solution.

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Periodical:

Solid State Phenomena (Volume 314)

Pages:

113-118

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.113

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Online since:

February 2021

Authors:

Changjin Son, Sang Woo Lim*

Keywords:

Additives, Etching, Kinetics, Si₃N₄, Superheated Water

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