Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning

Kazuki Nishihara; Masaki Inaba; Hiroaki Takahashi

doi:10.4028/www.scientific.net/SSP.314.101

Paper Titles

GaN MOS Structures with Low Interface Trap Density
p.79

Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water
p.84

Effect of Surface Oxidation on the Material Loss of InGaAs in Acidic Solutions
p.89

Characterization of Wet Chemical Atomic Layer Etching of InGaAs
p.95

Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning
p.101

Silicon Corrosion during Selective Silicon Nitride Etch with Hot Diluted Hydrofluoric Acid
p.107

Kinetic Study on the Si₃N₄ Etching in Superheated Water
p.113

Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling
p.119

Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas
p.127

HomeSolid State PhenomenaSolid State Phenomena Vol. 314Highly Selective Etching between Different Oxide...

Highly Selective Etching between Different Oxide Films by Vapor Phase Cleaning

Abstract:

VPC (Vapor Phase Cleaning) is studied to etch various types oxide film using a mixture of HF gas and H₂O vapor. We focused on controlling the amount of gas molecules adsorbed on the oxide surface and investigated the H₂O amount included in oxide films, which will contribute to the oxide etching reaction. We have verified that selective etching between different oxide films can be achieved by controlling the gas adhesion amount by varying process parameters and utilizing the different amounts of H₂O in the oxide films for several deposition methods.

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XV

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 314)

Pages:

101-106

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.101

Citation:

Cite this paper

Online since:

February 2021

Authors:

Kazuki Nishihara*, Masaki Inaba, Hiroaki Takahashi

Keywords:

Gas Phase Etch, H₂O Vapor, HF gas, Oxide, Selective Etch

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] P. J. Holmes and J. E. Snell, Microelectron. Reliab., 5 (1966) 337-341.

Google Scholar

[2] N. Miki et al., IEEE Trans. Electron Devices, 37 (1990) 107-115.

Google Scholar

[3] H. Watanabe et al., J. Electrochem. Soc., 142 (1995) 237-243.

Google Scholar

[4] W. J. C. Vermeulen et al., Proceeding of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, (1994) 241-252.

Google Scholar

[5] C. R. Helms, B. E. Deal, J. Vac. Sci. Technol. A, 10 (1992) 806-811.

Google Scholar

[6] Y.-I. Lee et al., J. Microelectromech Syst., 6 (1997) 226-233.

Google Scholar

[7] V.Y. Vasilyev, Borophoshosilicate Glass Thin Films in Electronics.,, Nova Science Publishers (2013).

Google Scholar

[8] J.S. Judge, J. Electrochem. Soc., 118 (1971) 1772-1775.

Google Scholar

[9] N. Hirashita et al., Jpn. J. Appl. Phys., 32 (1993) 1787-1793.

Google Scholar

[10] D. M. Knotter, T. J. J. Denteneer, J. Electrochem. Soc., 148 (2001) F43-F46.

Google Scholar