Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water

Abstract:

Group III–V compound semiconductors are attracting attention as new channel materials that have higher carrier mobility than Si. However, defects easily occur at the interface between the semiconductor and insulator film, which degrades performance. In an earlier study, we demonstrated that the interfacial properties of InP are degraded by the growth of In₂O₃ and that In₂O₃ grows better in water than in air. Therefore, it is necessary to suppress the growth of In₂O₃ to improve the interfacial properties of InP. In this work, we focused on functional water, which can be controlled by adjusting the water conditions, and investigated the growth behavior of In₂O₃ in functional water. As a result, we found that the growth is suppressed in the low-pH range and in hydrogen water. It is important that H⁺ ions reduce OH⁻ ions, which contributes to the reaction with InP.

• Periodical: Solid State Phenomena (Volume 314)
• Pages: 84-88
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.314.84
• Online since: February 2021
• Authors: Kenya Nishio*, Takashi Oinoue, Suguru Saito, Yoshiya Hagimoto, Yuichi Ogawa, Junichi Ida, Hayato Iwamoto
• Keywords: Functional Water, H₂O, III-V Compound Semiconductor, In₂O₃, InP, ORP, pH, XPS

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