For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol
p.23
Cl-Containing Microplastics from the Environment
p.29
Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines
p.34
Wafer Container Monitoring Concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow
p.41
Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe
p.49
Wet Chemical Cleaning of Organosilane Monolayers
p.54
Reaction Kinetics of Poly-Si Etching in TMAH Solution
p.60
Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions
p.66
Si1-XGeX Selective Etchant for Gate-All-Around Transistors
p.71

Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe

Article Preview

Abstract:

The steam oxidation of SiGe shows a transition from Si-like to Ge-like oxidation behavior depending on Ge concentration and oxidation temperature. Ge-like oxidation is described by the generation of oxygen vacancies (VO) at the interface between the oxide and SiGe virtual substrate. [1] Due to the different oxidation behavior, the presence of a Ge-oxide-free interfacial layer (IL) can suppress SiGe oxidation. [2] Here we show how a passivating interfacial layer can be grown using low-pressure oxidation and highlight the importance of SiGe surface preparation prior to low-pressure oxidation.

You might also be interested in these eBooks
Ultra Clean Processing of Semiconductor Surfaces XV View Preview

Info:

Periodical:

Solid State Phenomena (Volume 314)

Pages:

49-53

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.49

Citation:

Cite this paper

Online since:

February 2021

Authors:

Kurt Wostyn*, Hiroaki Arimura, Yosuke Kimura, Andriy Hikavyy, Dirk Rondas, Thierry Conard, Lars Åke Ragnarsson, Naoto Horiguchi

Keywords:

Ge Pull Out, Oxidation, Si-Cap-Free SiGe Passivation, SiGe, Surface Preparation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2021 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] K. Wostyn et al. presented at ISTDM/ICSI (2018).

Google Scholar

[2] K. Wostyn et al. ECS Trans 93 (2019) p.71.

Google Scholar

[3] G. Yeap et al. IEDM (2019) p.879.

Google Scholar

[4] C.H. Lee et al. VLSI Tech. Dig. (2016) p.36.

Google Scholar

[5] H. Arimura et al. IEDM (2019) p.677.

Google Scholar

[6] J.T. Law et al. J. Electrochem. Soc. 104 (1957) p.154.

Google Scholar

[7] X. Wang et al. Appl. Phys. Lett. 111 (2017) 052101.

Google Scholar

[8] E. Long et al J Vac Sci Technol B 30 (2012) 041212.

Google Scholar

[9] R. Kube et al. J. Appl Phys 107 (2010) 073520.

Google Scholar

[10] C. H. Lee et al. IEDM (2016) p.766.

Google Scholar

[11] H. Mertens et al. VLSI Tech. Dig. (2016) p.158.

Google Scholar

[12] Y. Bogumilowicz et al. Semicond. Sci. Technol. 20 (2005) p.127.

Google Scholar

[13] K. Wostyn et al. submitted to 2020 SPCC (Surface Preparation and Cleaning Conference).

Google Scholar

[14] A. Hikavyy et al. Semicond. Sci. Technol. 34 (2019) 074003.

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.