Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol

Seung Jun Oh; Sun Young Lee; Heehwan Kim; Donggeon Kwak; Chulwoo Bae; Taesung Kim

doi:10.4028/www.scientific.net/SSP.314.23

Paper Titles

Surface Cleaning Challenges for Organic Light Emitting Diodes
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Direct Analysis of Ultra Trace Metallic Particles in NH₃ and HCl Gases by Gas Exchange Device (GED)-ICP-MS
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Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol
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Cl-Containing Microplastics from the Environment
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Experimental Wafer Carrier Contamination Analysis and Monitoring in Fully Automated 300 mm Power Production Lines
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Wafer Container Monitoring Concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow
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Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe
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HomeSolid State PhenomenaSolid State Phenomena Vol. 314Investigation of Contaminants in Single Wafer Wet...

Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol

Abstract:

Technological control over ultra-trace level contaminants is important for semiconductor development. Despite technological developments, defects remain in the single wafer wet cleaning process. In this paper, the source of the contamination is explained via trace analytical methods. Fluorine resin materials of polytetrafluoroethylene (PTFE) and ethylene tetrafluoroethylene (ETFE) are commonly used in semiconductor equipment. Isopropyl alcohol (IPA) oxidation reactions occur at high temperature below the boiling point due to impurities. IPA changed to different alcohol forms from gas chromatography (GCMS) analysis. The oxygen concentration in the X-ray photoelectron spectroscopy (XPS) results increased and formed new bonds in IPA with fluorine resin. These reactions confirmed that cations were a catalyst from the time-of-flight secondary ion mass spectrometry (TOF-SIMS) results. Representative ions were Fe+, K+, and Na+ with different concentrations for each material.

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Periodical:

Solid State Phenomena (Volume 314)

Pages:

23-28

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.314.23

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Online since:

February 2021

Authors:

Seung Jun Oh*, Sun Young Lee, Heehwan Kim, Donggeon Kwak, Chulwoo Bae, Taesung Kim

Keywords:

Analysis Method, Defects, IPA, Single Wafer Wet Cleaning

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