Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide
p.253
p.253
Dopant Migration Caused by Point Defect Gradients
p.259
p.259
Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory
p.269
p.269
Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon
p.273
p.273
Electric-Dipole Spin Resonance on Extended Defects in Silicon
p.279
p.279
Luminescence of Dislocations in SiGe/Si Structures
p.291
p.291
On the Nature of Dislocation Luminescence in Si and Ge
p.303
p.303
Defect Electrical Activity Study Using a Si(Ge) Heteroepitaxial Structure
p.309
p.309
Properties of Dislocations and Point Defects in Fz-Si
p.319
p.319
Electric-Dipole Spin Resonance on Extended Defects in Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 32-33)
Pages:
279-290
Citation:
Online since:
December 1993
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Сopyright:
© 1993 Trans Tech Publications Ltd. All Rights Reserved
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