Paper Titles

Process-Induced Defects in Silicon Technology
p.231

Lattice Defects Induced in Si_1-xGe_x Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics
p.247

Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide
p.253

Dopant Migration Caused by Point Defect Gradients
p.259

Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory
p.269

Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon
p.273

Electric-Dipole Spin Resonance on Extended Defects in Silicon
p.279

Luminescence of Dislocations in SiGe/Si Structures
p.291

On the Nature of Dislocation Luminescence in Si and Ge
p.303

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Vacancy Assisted Diffusion of Si in GaAs:...

Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

269-272

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.269

Citation:

Cite this paper

Online since:

December 1993

Authors:

Jaroslaw Dąbrowski, J. Northrup

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: