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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Dopant Migration Caused by Point Defect Gradients

Dopant Migration Caused by Point Defect Gradients

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

259-268

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.259

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Online since:

December 1993

Authors:

P. Pichler, S. List

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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