Paper Titles

Annealing Properties of N-Doped Cz-Si Crystals
p.203

Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study
p.207

Formation and Properties of Tetranuclear Clusters of Manganese in Silicon
p.213

EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon
p.219

Investigation of Deep Levels and Carrier Dynamics in SiC Films
p.225

Process-Induced Defects in Silicon Technology
p.231

Lattice Defects Induced in Si_1-xGe_x Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics
p.247

Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide
p.253

Dopant Migration Caused by Point Defect Gradients
p.259

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Investigation of Deep Levels and Carrier Dynamics...

Investigation of Deep Levels and Carrier Dynamics in SiC Films

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

225-230

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.225

Citation:

Cite this paper

Online since:

December 1993

Authors:

M. Petrauskas, V. Bikbayev, R. Tomasiunas, Magnus Willander, Qamar-ul Wahab

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: