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Annealing Properties of N-Doped Cz-Si Crystals
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Formation and Properties of Tetranuclear Clusters of Manganese in Silicon
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EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon
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Investigation of Deep Levels and Carrier Dynamics in SiC Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Formation and Properties of Tetranuclear Clusters...

Formation and Properties of Tetranuclear Clusters of Manganese in Silicon

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

213-218

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.213

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Online since:

December 1993

Authors:

J. Kreissl, W. Gehlhoff

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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