The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD

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Periodical:

Solid State Phenomena (Volumes 32-33)

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

197-202

DOI:

10.4028/www.scientific.net/SSP.32-33.197

Citation:

D. Krüger et al., "The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD", Solid State Phenomena, Vols. 32-33, pp. 197-202, 1993

Online since:

December 1993

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