Paper Titles

Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)
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Properties of Hydrogen, Oxygen and Carbon in Si
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Solubility of Hydrogen in Silicon at High Temperatures
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Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
p.161

Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature
p.167

Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
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New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon
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Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface
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The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si_1-xGe_x - Layers on Silicon Grown by APCVD
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Evolution of Oxygen Clusters and Agglomerates in...

Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

167-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.167

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Online since:

December 1993

Authors:

Andrzej Misiuk, J. Adamczewska, Jadwiga Bak-Misiuk, Josh Wolf

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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