Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
p.161
p.161
Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature
p.167
p.167
Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
p.173
p.173
New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon
p.181
p.181
Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface
p.191
p.191
The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD
p.197
p.197
Annealing Properties of N-Doped Cz-Si Crystals
p.203
p.203
Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study
p.207
p.207
Formation and Properties of Tetranuclear Clusters of Manganese in Silicon
p.213
p.213
Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface
Abstract:
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Periodical:
Solid State Phenomena (Volumes 32-33)
Pages:
191-196
Citation:
Online since:
December 1993
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© 1993 Trans Tech Publications Ltd. All Rights Reserved
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