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Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
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Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface
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The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si_1-xGe_x - Layers on Silicon Grown by APCVD
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Annealing Properties of N-Doped Cz-Si Crystals
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Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study
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Formation and Properties of Tetranuclear Clusters of Manganese in Silicon
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EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon
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Investigation of Deep Levels and Carrier Dynamics in SiC Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Annealing Properties of N-Doped Cz-Si Crystals

Annealing Properties of N-Doped Cz-Si Crystals

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

203-206

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.203

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Online since:

December 1993

Authors:

Chin Sheng Chen, Fu Long Dai, H.J. Ye, Y.C. Huang, De Ren Yang, H.N. Yao

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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