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Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
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New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon
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Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Peculiarities in the Defect Behavior in...

Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

173-180

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.173

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Online since:

December 1993

Authors:

Valentin V. Emtsev, Gagik A. Oganesyan, K. Schmalz

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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