Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C

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Periodical:

Solid State Phenomena (Volumes 32-33)

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

161-166

DOI:

10.4028/www.scientific.net/SSP.32-33.161

Citation:

C. A. Londos et al., "Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C", Solid State Phenomena, Vols. 32-33, pp. 161-166, 1993

Online since:

December 1993

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