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Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures
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Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)
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Properties of Hydrogen, Oxygen and Carbon in Si
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Solubility of Hydrogen in Silicon at High Temperatures
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Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
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Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature
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Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
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New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon
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Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface
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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Effect of Oxygen Concentration on the Kinetics of...

Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

161-166

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.161

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Online since:

December 1993

Authors:

Charalamos A. Londos, S.A. McQuaid, M.J. Binns, R.C. Newman, J.H. Tucker

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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