Paper Titles

Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE
p.117

Misfit Strain Engineering in Heteroepitaxial Structures
p.123

Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures
p.129

Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)
p.141

Properties of Hydrogen, Oxygen and Carbon in Si
p.143

Solubility of Hydrogen in Silicon at High Temperatures
p.155

Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
p.161

Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature
p.167

Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
p.173

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Properties of Hydrogen, Oxygen and Carbon in Si

Properties of Hydrogen, Oxygen and Carbon in Si

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

143-154

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.143

Citation:

Cite this paper

Online since:

December 1993

Authors:

A.L. Endrös

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: