Paper Titles

Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile
p.99

On the Interaction of Transition Metals with Silicon Grain Boundaries
p.105

Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma
p.111

Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE
p.117

Misfit Strain Engineering in Heteroepitaxial Structures
p.123

Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures
p.129

Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)
p.141

Properties of Hydrogen, Oxygen and Carbon in Si
p.143

Solubility of Hydrogen in Silicon at High Temperatures
p.155

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Misfit Strain Engineering in Heteroepitaxial...

Misfit Strain Engineering in Heteroepitaxial Structures

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Gettering and Defect Engineering in Semiconductor Technology V

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Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

123-128

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.123

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Online since:

December 1993

Authors:

Hans Richter, A. Fischer, H. Kühne, M. Eichler

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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