Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile

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Periodical:

Solid State Phenomena (Volumes 32-33)

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

99-104

DOI:

10.4028/www.scientific.net/SSP.32-33.99

Citation:

O.V. Kononchuk and E. B. Yakimov, "Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile", Solid State Phenomena, Vols. 32-33, pp. 99-104, 1993

Online since:

December 1993

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$35.00

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